| PART |
Description |
Maker |
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| RF7115 RF7115PCBA-41X RF7115SB |
QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE
|
RF Micro Devices
|
| RF3161 RF3161PCBA-410 RF3161SB |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
http://
RF Micro Devices
|
| RF3166 |
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
|
RFMD
|
| TQM7M5012-15 |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
|
TriQuint Semiconductor
|
| RF3146PCBA-41X RF31461 |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
RF Micro Devices
|
| RF3145PCBA-41X RF3145 |
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
|
RFMD[RF Micro Devices]
|
| RF31451 |
QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
|
RF Micro Devices
|
| IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
